| PART |
Description |
Maker |
| N01L6183A |
1Mb Ultra-Low Power Asynchronous CMOS SRAM
|
ON Semiconductor
|
| N01L83W2AT5I N01L83W2AT5IT N01L83W2AN25I N01L83W2A |
1Mb Ultra-Low Power Asynchronous CMOS SRAM 128K ? 8 bit
1Mb Ultra-Low Power Asynchronous CMOS SRAM 128K × 8 bit
|
ON Semiconductor
|
| A0A16 |
Low Power Slow SRAM - 1Mb
|
Hynix Semiconductor
|
| EL2126CS-T EL2126CW-T EL2126CW-T7A EL2126CW-T7 EL2 |
Ultra-Low Noise/ Low Power/ Wideband Amplifier
Op Amp, 100MHz Wideband, Ultra Low Noise 1.3nV/√Hz, Low Power, 2.5-15VDC
Ultra-Low Noise Low Power Wideband Amplifier
|
INTERSIL[Intersil Corporation]
|
| M29W800AB M29W800AB120ZA5T M29W800AT80ZA5T M29W800 |
8 Mbit 1Mb x8 or 512Kb x16 / Boot Block Low Voltage Single Supply Flash Memory
Low-Power Single Buffer/Driver with 3-State Output 5-DSBGA -40 to 85 8兆x812KB的x16插槽，引导块低压单电源闪
RESISTOR: 100 OHM, 1/10W, 1%, PACKAGE 0805 81兆x812KB的x16插槽，引导块低压单电源闪
8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory 8兆x812KB的x16插槽，引导块低压单电源闪
Low-Power Single Buffer/Driver with 3-State Output 5-SOT-23 -40 to 85
|
ST Microelectronics
意法半导
STMicroelectronics N.V.
|
| M27W800-150K6TR M27W800 M27W800-100B6TR M27W800-10 |
8 Mbit (1Mb x 8 or 512Kb x 16), Low Voltage UV EPROM and OTP EPROM
8 Mbit 1Mb x 8 or 512Kb x 16 Low Voltage UV EPROM and OTP EPROM 8兆8512KB × 16低压紫外线存储器和OTP存储
81兆812KB × 16低压紫外线存储器和OTP存储
8 MBIT (1MB X 8 OR 512KB X 16) LOW VOLTAGE UV EPROM AND OTP EPROM
512 Kbit 64Kb x8 Low Voltage UV EPROM and OTP EPROM
|
SGS Thomson Microelectronics
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| HY62U8100B-E HY62U8100B-I HY62U8100BLLG HY62U8100B |
Low Power Slow SRAM - 1Mb
128K x8 bit 3.0V Low Power CMOS slow SRAM
x8|3V|70/85/100|Low Power Slow SRAM - 1M
|
Hynix Semiconductor
|
| 27C512A-90/J 27C512A-90/K 27C512A-70/J 27C512A-70/ |
Single/Dual/Quad, 28MHz, Low-Noise, Low-Voltage, Precision Op Amps
500MHz, Low-Power Op Amps
250MHz, Broadcast-Quality, Low-Power Video Op Amps
Evaluation Kit for the MAX4104, MAX4105, MAX4304, MAX4305
Micropower, SOT23, Rail-to-Rail, Fixed-Gain GainAmp Open-Loop GainAmps Op Amps
400MHz, Ultra-Low-Distortion Op Amps
x8 EPROM x8存储
330MHz Buffered Video Switches Crosspoint Building Blocks x8存储
350MHz, Ultra-Low-Noise Op Amps x8存储
Single/Dual/Quad, 400MHz, Low-Power, Current Feedback Amplifiers x8存储
|
Integrated Device Technology, Inc.
|
| IS62WV51216BLL-55BLI IS62WV51216ALL-70XI IS62WV512 |
512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM 512K X 16 STANDARD SRAM, 45 ns, PBGA48
512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM 12k × 16低电压，超低功耗的CMOS静态RAM
512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM 512K X 16 STANDARD SRAM, 55 ns, PDSO44
|
Integrated Silicon Solution, Inc.
|
